Memory Cell for Data storage

</a><strong>Background</strong><br>

Non-volatile Flash memories can store data for years without refreshing, but write information about 1000 times slower than volatile dynamic random access memories (DRAMs).<!–break–></p> <p style=“margin-bottom: 0.0001pt;“ class=“MsoNormal“><strong>Technology</strong><br> The invention is a semiconductor heterostructure (quantum dot) based memory cell, in which the writing process is based on hole or electron storage and the erasing process is due to the recombination of electrons and holes. This memory cell can be switched between electron and hole storage and used as binary storage element. <strong><br> <br> Benefits</strong><br> <ul> <li>Long-term data storage </li> <li>High read/write speed</li> <li>Low write/erase voltage (less than 2 V)</li> <li>Switchable between hole and electron storage</li> <li>High switching speed </li> </ul> <strong><br> <br> IP Rights</strong><br> German Patent Application 2011<br> PCT application <strong><br> <br> Patent Owner</strong><br> Technische Universität Berlin, Germany</p>

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